-40%
1/5/10Pcs Mitsubishi M5M44100CJ 4M (4M x 1) Bit DRAM Dynamic RAM CMOS SMD SOJ
1/5/10Pcs Mitsubishi M5M44100CJ 4M (4M x 1) Bit DRAM Dynamic RAM CMOS SMD SOJ
1/5/10Pcs Mitsubishi M5M44100CJ 4M (4M x 1) Bit DRAM Dynamic RAM CMOS SMD SOJ
1/5/10Pcs Mitsubishi M5M44100CJ 4M (4M x 1) Bit DRAM Dynamic RAM CMOS SMD SOJ
1/5/10Pcs Mitsubishi M5M44100CJ 4M (4M x 1) Bit DRAM Dynamic RAM CMOS SMD SOJ
1/5/10Pcs Mitsubishi M5M44100CJ 4M (4M x 1) Bit DRAM Dynamic RAM CMOS SMD SOJ
1/5/10Pcs Mitsubishi M5M44100CJ 4M (4M x 1) Bit DRAM Dynamic RAM CMOS SMD SOJ
1/5/10Pcs Mitsubishi M5M44100CJ 4M (4M x 1) Bit DRAM Dynamic RAM CMOS SMD SOJ
1/5/10Pcs Mitsubishi M5M44100CJ 4M (4M x 1) Bit DRAM Dynamic RAM CMOS SMD SOJ

1/5/10Pcs Mitsubishi M5M44100CJ 4M (4M x 1) Bit DRAM Dynamic RAM CMOS SMD SOJ

$ 1.84

Availability: 13 in stock
  • Refund will be given as: Money back or replacement (buyer's choice)
  • Minimum Operating Voltage: 4.5 V
  • Maximum Operating Voltage: 5.5 V
  • Packaging: SOJ
  • Return shipping will be paid by: Buyer
  • Mounting Style: Surface Mount
  • Item must be returned within: 30 Days
  • Condition: New
  • All returns accepted: Returns Accepted
  • Memory Size: 4 Mbit
  • Type: DRAM
  • MPN: M5M44100CJ
  • Output Type: CMOS
  • Brand: Mitsubishi

    Description

    1/5/10Pcs Mitsubishi M5M44100CJ 4M (4M x 1) Bit DRAM Dynamic RAM CMOS SMD SOJ
    The M5M44100CJ is a 4194304-word by 1-bit dynamic RAM, fabricated with the high performance CMOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential.  The use of double-layer metalization process technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs. Multiplexed address inputs permit both a reduction in pins and an increase in system densities. Self or extended refresh current is low enough for battery back-up application.
    SPECIFICATIONS
    Manufacturer: Mitsubishi
    Part Number: M5M44100CJ
    Power Dissipation (Typ.): 400 mW  (550 mW Max)
    Access time (MAX.): 60 ns
    R/W cycle time (MIN.): 110 ns
    Standard 26-pin SOJ
    Single 5V±10% supply (4.5V to 5.5V)
    Low stand-by power dissipation
    CMOS Input level: 550 µW (Max)
    Self refresh capability
    -Self refresh current:    120µA(Max)
    Extended refresh capability
    - Extended refresh current: 120µA(Max)
    Fast-page mode(2048-column random access), Read-modify-write, RAS-only refresh, CAS before RAS refresh, Hidden refresh capabilities.
    Early-write operation gives common I/O capability.
    1024 refresh cycles every 128ms (A0~A9)
    16-bit parallel test mode capability
    We are a
    U.S. COMPANY
    in business since 1995 and offer
    FAST SHIPPING
    , usually within 1 business day.
    Our listings are for
    GENUINE Items
    , not cheap knock-off counterfeits.
    Please view all photos for potential datasheets
    and other information.
    For full datasheet, please contact us.
    Make sure to view the rest of our auctions for other
    Electronic Components and Unique Electronic Devices
    we have created.
    Click on
    Save This Seller
    and get notified of Sales and New Product Listings.
    If you want to purchase more quantity than listed or don't see the exact item you are searching for, please ask, we are here to help you.  We offer a discount on multiple item purchases and / or large quantities.