2Pcs. Intel PC28F256P30B85 256 Mbit 85 nS StrataFlash Flash Memory 64 BGA

Description

Two unused engineering samples in factory packaging.  From the data sheet:
Product Features
■ High performance
—85/88 ns initial access
—40 MHz with zero wait states, 20 ns clock-to data output synchronous-burst read mode
—25 ns asynchronous-page read mode
—4-, 8-, 16-, and continuous-word burst mode
—Buffered Enhanced Factory Programming (BEFP) at 5 μs/byte (Typ)
—1.8 V buffered programming at 7 μs/byte (Typ)
■ Architecture
—Multi-Level Cell Technology: Highest Density at Lowest Cost
—Asymmetrically-blocked architecture
—Four 32-KByte parameter blocks: top or bottom configuration
—128-KByte main blocks
■ Voltage and Power
—VCC (core) voltage: 1.7 V – 2.0 V
—VCCQ (I/O) voltage: 1.7 V – 3.6 V
—Standby current: 55 μA (Typ) for 256-Mbit
—4-Word synchronous read current:
13 mA (Typ) at 40 MHz
■ Quality and Reliability
—Operating temperature: –40 °C to +85 °C
• 1-Gbit in SCSP is –30 °C to +85 °C
—Minimum 100,000 erase cycles per block
—ETOX™ VIII process technology (130 nm)
■ Security
—One-Time Programmable Registers:
• 64 unique factory device identifier bits
• 64 user-programmable OTP bits
• Additional 2048 user-programmable OTP bits
—Selectable OTP Space in Main Array:
• 4x32KB parameter blocks + 3x128KB main blocks (top or bottom configuration)
—Absolute write protection: VPP = VSS
—Power-transition erase/program lockout
—Individual zero-latency block locking
—Individual block lock-down
■ Software
—20 μs (Typ) program suspend
—20 μs (Typ) erase suspend
— Intel® Flash Data Integrator optimized
—Basic Command Set and Extended Command Set compatible
—Common Flash Interface capable
■ Density and Packaging
—64/128/256-Mbit densities in 56-Lead TSOP package
—64/128/256/512-Mbit densities in 64-Ball Intel® Easy BGA package
—64/128/256/512-Mbit and 1-Gbit densities in Intel® QUAD+ SCSP
—16-bit wide data bus
The Intel StrataFlash® Embedded Memory (P30) product is the latest generation of IntelStrataFlash® memory devices. Offered in 64 Mbit up through 1-Gbit densities, the P30 device brings reliable, two-bit-per-cell storage technology to the embedded flash market segment. Benefits include more density in less space, high-speed interface, lowest cost-per-bit NOR device, and support for code and data storage. Features include high-performance synchronous burst read mode, fast asynchronous access times, low power, flexible security options, and three industry standard package choices.
The P30 product family is manufactured using Intel® 130 nm ETOX™ VIII process technology.
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