AMD Am29LV400BT-55REI 4 Mb (512K x 8/256K x 16) CMOS 3V Boot Sector Flash Memory

Description

AMD Am29LV400BT-55REI 4 Mb (512K x 8/256K x 16) CMOS 3V Boot Sector Flash Memory
Specifications
Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
— Regulated voltage range: 3.0 to 3.6 volt read and write operations for compatibility with high performance 3.3 volt microprocessors
Manufactured on 0.32 μm process technology
— Compatible with 0.5 μm Am29LV400 device
High performance
— Full voltage range: access times as fast as 70 ns
— Regulated voltage range: access times as fast as 55 ns
Ultra low power consumption (typical values at 5 MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 7 mA read current
— 15 mA program/erase current
Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and seven 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and seven 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
— A hardware method of locking a sector to prevent any program or erase operations within that sector
— Sectors can be locked in-system or via programming equipment
Temporary Sector Unprotect feature allows code changes in previously locked sectors
Unlock Bypass Program Command
— Reduces overall programming time when issuing multiple program command sequences
Embedded Algorithms
— Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors
— Embedded Program algorithm automatically writes and verifies data at specified addresses
Minimum 1,000,000 write cycle guarantee per sector
20-year data retention at 125°C
— Reliable operation for the life of the system
Package: 48-pin TSOP
Compatibility with JEDEC standards
— Pinout and software compatible with single-power supply Flash
— Superior inadvertent write protection
Data# Polling and toggle bits
— Provides a software method of detecting program or erase operation completion
Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting program or erase cycle completion
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation
Hardware reset pin (RESET#)
— Hardware method to reset the device to reading array data
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