RARE EMM Semiconductor GTE 2114-2CE SRAM Static Ram 1024x4 NMOS TTL 5V CDIP-18

Description

RARE EMM Semiconductor GTE 2114-2CE SRAM Static Ram 1024x4 NMOS TTL 5V CDIP-18
The 2114-2CE 1024–word 4–bit static random access memory is fabricated using N–channel silicon– gate technology. All internal circuits are fully static and therefore require no clocks or refreshing for operation. The data is read out nondestructively and has the same polarity as the input data. Common input/output pins are provided. The separate chip select input (CS) allows easy memory expansion by OR–tying individual devices to a data bus.
SPECIFICATIONS
Manufacturer: EMM Semiconductor / GTE
Part Number: 2114-2CE
Product Category: Static Ram
Mounting Style: Through Hole
Package / Case: CDIP-18
Operating Supply Voltage: 4.75 to 5.25 V
Read Cycle Time: 200 ns
ABSOLUTE MAXIMUM RATINGS
Voltage at Any Pin: –0.5V to +7V
Power Dissipation, PD: 1W
Storage Temperature Range, Tstg: –65° to +150°C
Lead Temperature (During Soldering, 10sec), TL: +300°C
FEATURES
All Inputs and Outputs Directly TTL Compatible
Static Operation: No Clocks or Refreshing Required
Low Power: 225mW Typ
High Speed: Down to 300ns Access Time
TRI–STATE Output for Bus interface
Common Data In and Data Out Pins
Single 5V Supply
Standard 18–Lead DIP Package
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